On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 383-386

  Van Wyk, E ^a   Leitch, A W R ^a  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

DLTS; MIS Devices; Oxide Trap; Switching State

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; HYDROGEN; SCHOTTKY BARRIER DIODES; SILICON WAFERS;

TRAP SIGNATURE;

SILICON CARBIDE;

EID: 4444283507     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.383     Document Type: Conference Paper

References (2)

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2. E.G. Stein von Kamienski, F. Portheine, J. Stein, A. Gölz and H. Kurz, J. Appl. Phys. 79(5) (1996) p. 2529.