Quantitative modeling of hydrogen diffusion and reactivation of H-passivated Al-acceptors in SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 331-334

  Hulsen C ^a   Achtziger, N ^b   Herold, J ^a   Witthuhn, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; HYDROGEN; ION IMPLANTATION; MATHEMATICAL MODELS; PASSIVATION; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

ALUMINUM ACCEPTORS; REACTIVATION; RECOMBINATION;

SILICON CARBIDE;

EID: 14344277798     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.331     Document Type: Article

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