Simulation of focused ion beam induced damage formation in crystalline silicon

Materials Research Society Symposium - Proceedings

Volumn 792, Issue , 2003, Pages 635-640

  Hobler, Gerhard ^a   Lugstein, Alois ^a   Brezna, Wolfgang ^a   Bertagnolli, Emmerich ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; COMPUTER SIMULATION; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; INTEGRATED CIRCUITS; ION BEAMS; SILICON; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; TRENCHING;

AMORPHOUS LAYERS; BINARY COLLISION (BC) CODES; FOCUSED ION BEAMS (FIB); HOMOGENOUS MATERIALS;

FOCUSING;

EID: 2442455631     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-792-r10.10     Document Type: Conference Paper

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