Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga+ irradiation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 5, 2003, Pages 1644-1648

  Lugstein, A ^a   Brezna, W ^a   Hobler, G ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; INTERFACES (MATERIALS); ION BEAMS; ION IMPLANTATION; IRRADIATION;

INTERFACE STATES;

SILICON;

EID: 0142027012     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1590964     Document Type: Conference Paper

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