Time dependence of phosphorus diffusion and dose loss during postimplantation annealing at low temperatures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 3 A, 2002, Pages 1220-1223

  Chang, Ruey Dar ^a,d   Choi, Philip S ^b   Kwong, Dim Lee ^c   Gardner, Mark ^a   Chu, Paul K ^a,b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b The University of Texas at Austin   (United States)

^c ADVANCED MICRO DEVICES   (United States)

^d CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Interface segregation; Ion implantation; Phosphorus; Silicon; Transient enhanced diffusion

Indexed keywords

ANNEALING; DIFFUSION; INTERFACES (MATERIALS); ION IMPLANTATION; SILICON;

TRANSIENT ENHANCED DIFFUSION (TED);

PHOSPHORUS;

EID: 0036508602     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1220     Document Type: Article

References (13)