High-speed avalanche photodiode with a neutral absorption layer for 1.55 μm wavelength

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 3 A, 2004, Pages

  Hirota, Yukihiro ^a   Ando, Seigo ^a   Ishibashi, Tadao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

APD; Avalanche photodiode; InGaAs; Neutral absorption layer; Photodetectors

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN; ELECTROMAGNETIC WAVE ABSORPTION; ELECTROMAGNETIC WAVE REFRACTION; ELECTRONS; GAIN CONTROL; GOLD; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODETECTORS; PLATINUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

AVALANCHE PHOTODIODES (APD); ELECTRON-INJECTION; NEUTRAL ABSORPTION LAYERS; REFRACTING-FACET (RF) STRUCTURE;

PHOTODIODES;

EID: 2442428605     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l375     Document Type: Article

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