Anisotropic transport of two-dimensional holes in high Landau levels

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 6, Issue 1, 2000, Pages 40-42

  Shayegan, M ^a   Manoharan, H C ^a,b   Papadakis, S J ^a   Poortere, E P De ^a  

^a Princeton University   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; HOLE TRAPS; MAGNETIC ANISOTROPY; MAGNETORESISTANCE; MORPHOLOGY; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

HIGH LANDAU LEVELS; QUANTUM HALL EFFECTS; VAN DER PAUW GEOMETRY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034139148     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00056-9     Document Type: Article

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