Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AIGaAs heterostructures

Nature

Volumn 420, Issue 6916, 2002, Pages 646-650

  Mani, Ramesh G ^a,b   Smet, Jürgen H ^b   Von Klitzing, Klaus ^b   Narayanamurti, Venkatesh ^a   Johnson, William B ^c   Umansky, Vladimir ^d  

^a HARVARD UNIVERSITY   (United States)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c LABORATORY FOR PHYSICAL SCIENCES   (United States)

^d WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTROMAGNETIC WAVES; ENERGY GAP; HALL EFFECT; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SUPERCONDUCTING TRANSITION TEMPERATURE; SUPERCONDUCTIVITY;

QUANTUM HALL SYSTEMS;

HETEROJUNCTIONS;

ALUMINUM; ARSENIC; GALLIUM; METAL;

ELECTRICAL RESISTIVITY; ELECTROMAGNETIC FIELD;

ARTICLE; CONDUCTANCE; ELECTRIC RESISTANCE; ELECTROMAGNETIC RADIATION; ELECTRON; ENERGY; LOW TEMPERATURE; MAGNETIC FIELD; MASS; PHASE TRANSITION; PRIORITY JOURNAL; QUANTUM MECHANICS; SURFACE CHARGE;

EID: 0013088436     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature01277     Document Type: Article

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