Nanofabrication processes for single-ion implantation of silicon quantum computer devices

Smart Materials and Structures

Volumn 11, Issue 5, 2002, Pages 735-740

  McKinnon, Rita P ^a   Stanley, Fay E ^a   Lumpkin, Nancy E ^a   Gauja, Eric ^a   Macks, Linda D ^a   Mitic, Mladen ^a   Chan, Victor ^a   Peceros, Katia ^a   Buehler, Tilo M ^a   Dzurak, Andrew S ^a   Clark, Robert G ^a   Yang, Changyi ^a,b   Jamieson, David N ^a,b   Prawer, Steven D ^a,b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ION IMPLANTATION; NANOTECHNOLOGY; SILICON; SUBSTRATES;

QUANTUM COMPUTER DEVICES;

QUANTUM ELECTRONICS;

EID: 18644386506     PISSN: 09641726     EISSN: None     Source Type: Journal    
DOI: 10.1088/0964-1726/11/5/317     Document Type: Article

References (14)

1. Grover L.K. 1997 Quantum computers can search arbitrarily large databases by a single query Phys. Rev. Lett. 79 4709-12.
2. Shor P.W. 1994 Algorithms for quantum computation: discrete logarithms and factoring Proc. 35th Annu. Symp. on Foundations of Computer Science (Los Alamitos, CA: IEEE Computer Society Press) pp 124-34.
3. Steane A. 1998 Quantum computing Rep. Prog. Phys. 61 117-73.
4. Kane B.E. 1998 A silicon-based nuclear spin quantum computer Nature 393 133-7.
5. O'Brien J.L., Schofield S.R., Simmons M.Y., Clark R.G., Dzurak A.S., Curson N.J., Kane B.E., McAlpine N.S., Hawley M.E. and Brown G.W. 2001 Towards the fabrication of phosphorus qubits for a silicon quantum computer Phys. Rev. B 64 161401-4.
6. Buehler T.M., McKinnon R.P., Lumpkin N.E., Brenner R., Reilly D.J., Macks L.D., Hamilton A.R., Dzurak A.S. and Clark R.G. 2002 Self-aligned fabrication process for silicon quantum computer devices Nanotechnology at press (Buehler T.M., McKinnon R.P., Lumpkin N.E., Brenner R., Reilly D.J., Macks L.D., Hamilton A.R., Dzurak A.S. and Clark R.G. 2002 Preprint cond-mat/0208374).
7. Yang C., Jamieson D.N., Hearne S.M., Pakes C.I., Prawer S.D., Stanley F.E., Macks L.D.M., Gauja E., Dzurak A.S. and Clark R.G. 2002 Single keV ion implantation by electrical registration of ion strikes, in preparation.
8. McKinnon R.P., Stanley F.E., Macks L.D., Mitic M., Gauja E., Peceros K., Buehler T.M., Dzurak A.S., Clark R.G., Yang C., Jamieson D.N., Prawer S., Pakes C.I. and McCallum J.C. 2002 Silicon quantum computer devices with controlled single-ion implants Appl. Phys. Lett. to be submitted.
9. Vrijen R., Yablonovitch E., Wang K., Jiang H.W., Balandin A., Roychowdhury V., Mor T. and DiVincenzo D. 2000 Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures Phys. Rev. A 62 12 306-15.
10. Yang C., Jamieson D.N., Hearne S.M., Gauja E. and Dzurak A.S. 2002 Optimisation of silicon detectors for low energy and heavy ions Nucl. Instrum. Methods Phys. Res. B at press.
11. Dolan G.J. 1977 Offset masks for lift-off photoprocessing Appl. Phys. Lett. 31 337-9.
12. Fulton T.A. and Dolan G.J. 1987 Observation of single-electron charging effects in small tunnel junctions Phys. Rev. Lett. 59 109-12.
13. 3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement Appl. Phys. Lett. 68 275-7.
14. Chen W. and Ahmed H. 1993 Fabrication of 5-7 nm wide etched lines in silicon using 100 kev electron-beam lithography and polymethylmethacrylate resist Appl. Phys. Lett. 62 1499-501.