Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering

Applied Physics Letters

Volumn 87, Issue 3, 2005, Pages

  Liu, Y ^a   Chen, T P ^a   Zhao, P ^a   Zhang, S ^b   Fung, S ^c   Fu, Y Q ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; MEMORY APPLICATIONS; METAL ELECTRODES; RADIO FREQUENCY SPUTTERING;

ARGON; ELECTRON TRAPS; MAGNETRON SPUTTERING; METALLIC FILMS; NANOSTRUCTURED MATERIALS; NITROGEN; SEMICONDUCTOR DEVICES;

ALUMINUM;

EID: 24144492140     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2000337     Document Type: Article

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