Gate-last MISFET structures and process for characterization of high-k and metal gate MISFETs

IEICE Transactions on Electronics

Volumn E88-C, Issue 5, 2005, Pages 804-809

  Matsuki, Takeo ^a   Torii, Kazuyoshi ^a   Maeda, Takeshi ^a   Akasaka, Yasushi ^a   Hayashi, Kiyoshi ^a   Kasai, Naoki ^a   Arikado, Tsunetoshi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Gate last; High k; Metal gate; MOSFET

Indexed keywords

ALUMINUM; CONTAMINATION; ELECTRIC INSULATORS; ELECTRIC WIRE; ELECTRODES; ETCHING; MISFET DEVICES; MOSFET DEVICES;

GATE-LAST; HIGH-K; METAL-GATE; MOSFET;

GATES (TRANSISTOR);

EID: 24144482674     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: 10.1093/ietele/e88-c.5.804     Document Type: Conference Paper

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