Effect of annealing on leakage current in Ba 0.5Sr 0.5 TiO 3 and Ba 0.96Ca 0.04 Ti 0.84Zr 0.16O 3 thin films with Pt electrodes

Applied Physics Letters

Volumn 87, Issue 3, 2005, Pages

  Cramer, N ^a   Mahmud, Ali ^b   Kalkur, T S ^b  

^a Applied Ceramics Research   (United States)

^b University of Colorado Colorado Springs   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL TEMPERATURE; POST ANNEALING; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY EMISSION;

ANNEALING; CAPACITORS; FILM GROWTH; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXYGEN; THIN FILMS;

BARIUM COMPOUNDS;

EID: 24144481504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1990250     Document Type: Article

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