Low temperature deposited Ba 0.96Ca 0.04Ti 0.84Zr 0.16O 3 thin films on Pt electrodes by radio frequency magnetron sputtering

Applied Physics Letters

Volumn 84, Issue 5, 2004, Pages 771-773

  Cramer, N ^a   Philofsky, Elliot ^a   Kammerdiner, Lee ^a   Kalkur, T S ^b  

^a Applied Ceramics Research   (United States)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS MEMORY CAPACITORS; ROOM TEMPERATURE;

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; CURRENT DENSITY; ELECTRIC FIELDS; ELECTRODES; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PERMITTIVITY; PLATINUM; SINTERING; SOL-GELS; SPUTTER DEPOSITION; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 1242264030     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1645313     Document Type: Article

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