Comparison study of ohmic contacts to 4H-silicon carbide in oxidizing ambient for harsh environment gas sensor applications

Solid-State Electronics

Volumn 49, Issue 8, 2005, Pages 1297-1301

  Lee, Sang Kwon ^a   Suh, Eun Kyung ^a   Cho, Nam Kyu ^b   Park, Hyo Duck ^b   Uneus, Lars ^c   Spetz, Anita Lloyd ^c  

^a Chonbuk National University   (South Korea)

^b Korea Electronic Technology Institute (KETI)   (South Korea)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Gas sensor; LTLM structures; Ohmic contacts; Silicon carbide

Indexed keywords

AEROSPACE ENGINEERING; CARRIER COMMUNICATION; CHEMICAL SENSORS; OXIDATION; SILICON CARBIDE; TEMPERATURE CONTROL; TEMPERATURE MEASUREMENT;

GAS FLOW CHANNEL; LTLM STRUCTURES; OXIDIZING ENVIRONMENT; TRANSMISSION LINE METHOD (TLM);

OHMIC CONTACTS;

EID: 24144437378     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.06.005     Document Type: Article

References (14)

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