Higher picosecond photoresponsivity realized by introducing hole-capturing levels of iron in GaAs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2138-2142

  Ohsawa, J ^a   Ozaki, Y ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Carrier capture; Diffusion; EL2; EL6; Gallium arsenide; High speed; Iron; Photocurrent; Semi insulating

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; ELECTRON ENERGY LEVELS; IRON; PHOTOCURRENTS; SEMICONDUCTOR DOPING;

ELECTRON CAPTURE; PHOTORESPONSIVITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035302141     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2138     Document Type: Article

References (21)