A review on RF ESD protection design

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1304-1311

  Wang, Albert Z H ^a   Feng, Haigang ^a,b   Zhan, Rouying ^a,c   Xie, Haolu ^a   Chen, Guang ^a   Wu, Qiong ^a   Guan, Xiaokang ^a   Wang, Zhihua ^d   Zhang, Chun ^d  

^a Illinois Institute of Technology   (United States)

^b RF Micro Devices   (United States)

^c FREESCALE SEMICONDUCTOR INC   (United States)

^d TSINGHUA UNIVERSITY   (China)

Author keywords

Electrostatic discharge (ESD); Electrostatic discharge (ESD) protection; Parasitic; Radio frequency (RF) electrostatic discharge (ESD)

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC DISCHARGES; ELECTRIC INDUCTORS; ELECTROSTATICS; MIXER CIRCUITS;

ELECTROSTATIC DISCHARGE; ELECTROSTATIC DISCHARGE (ESD) PROTECTION; RF ESD;

INTEGRATED CIRCUIT LAYOUT;

EID: 23944460371     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850652     Document Type: Review

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