A new low-parasitic polysilicon SCR ESD protection structure for RF ICs

IEEE Electron Device Letters

Volumn 26, Issue 2, 2005, Pages 121-123

  Xie, Haolu ^a   Feng, Haigang ^a   Zhan, Rouying ^a   Wang, Albert ^a   Rodriguez, David ^b   Rice, David ^b  

^a Illinois Institute of Technology   (United States)

^b SMSC   (United States)

Author keywords

Electrostatic discharge; Electrostatic discharge (ESD) protection; F factor; Low parasitic; RF; Silicon controlled rectifier (SCR)

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTROSTATICS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES;

ELECTROSTATIC DISCHARGE; ELECTROSTATIC DISCHARGE (ESD) PROTECTION; F-FACTOR; LOW PARASITIC ELECTROSTATIC DISCHARGE; RF INTEGRATED CIRCUITS;

THYRISTORS;

EID: 13444280428     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.841860     Document Type: Article

References (9)

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