CW-laser crystallisation of amorphous SiC alloys

Electronics Letters

Volumn 34, Issue 14, 1998, Pages 1430-1431

  Palma, C ^a   Rossi, M C ^a   Sapia, C ^a  

^a ROMA TRE UNIVERSITY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CONTINUOUS WAVE LASERS; CRYSTALLINE MATERIALS; CRYSTALLIZATION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEGREGATION (METALLOGRAPHY); SILICON CARBIDE; STOICHIOMETRY; THERMAL EFFECTS;

HEXAGONAL POLYTYPES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 11744288773     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980974     Document Type: Article

References (4)

1. CHELNOKOV, V.E., SYRKIN, A.L., and DMITRIEV, V.A.: 'Overview of SiC power electronics', Diamond Relat. Mater., 1997, 6, pp. 1480-1484
2. REICHERT, W., OBERMAIER, E.,8 and STOEMENOS, J.: 'β-SiC films on SOI substrates for high temperature application', Diamond Relat. Mater., 1997, 6, pp. 1448-1450
3. SAMESHIMA, T.: 'Laser processing for thin film transistor applications', Material Sci. Eng. B, 1997, 45, pp. 186-193
4. DE CESARE, G., GALLUZZI, F., GLUATTARI, G., LEO, G., and VINCENZONI, R.: 'Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys', Diamond Relat. Mater., 1993, 2, pp. 773-777