High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radio-frequency plasma source

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Pinault, M A ^a   Freundlich, A ^a   Coaquira, J A H ^a   Fotkatzikis, A ^a  

^a University of Houston   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; RADIO FREQUENCIES; SUBSTRATE TEMPERATURES; SURFACE RECONSTRUCTION;

CHEMICAL BEAM EPITAXY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; NITROGEN; OPTIMIZATION; PHASE COMPOSITION; PHOTOLUMINESCENCE; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; THERMODYNAMICS;

GALLIUM COMPOUNDS;

EID: 23844549290     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1996853     Document Type: Article

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