Enhancement of the 90° domain-wall mobility in sol-gel (Pb,La) TiO 3 thin films prepared by multiple deposition and crystallization

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Poyato, R ^a   Alguero M ^a   Calzada, M L ^a   Pardo, L ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DOMAIN WALL MOBILITY; FERROELECTRIC MEMORIES; MICROELECTRONIC TECHNOLOGY; THIN-FILM DEPOSITION TECHNIQUE;

CRYSTALLIZATION; DEPOSITION; FERROELECTRIC MATERIALS; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; MICROELECTROMECHANICAL DEVICES; PERMITTIVITY; PEROVSKITE; POLARIZATION; RESIDUAL STRESSES; SILICON; SINGLE CRYSTALS; THIN FILMS; TITANIUM DIOXIDE;

SOL-GELS;

EID: 23844530263     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1994936     Document Type: Article

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