Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in SiO 2 glasses

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Wang, R P ^a,b   Tai, N ^a   Saito, K ^a   Ikushima, A J ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ALKALI HALIDES; FABRICATION TECHNIQUE; FLUORINE DOPING; SELF-TRAPPED HOLES (STH);

BOND (MASONRY); ELECTRON RESONANCE; FLUORINE; INFRARED SPECTROGRAPHS; IRRADIATION; PARAMAGNETIC RESONANCE; PHOTOLITHOGRAPHY; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; ULTRAVIOLET DEVICES;

FUSED SILICA;

EID: 23844520976     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1980536     Document Type: Article

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