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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1540-1543

Trap generation induced by local distortion in amorphous silicon dioxide film

(1) Kaneta, Chioko a

a FUJITSU LABORATORIES LTD (Japan)

Author keywords

Hole; Local distortion; Molecular orbital method; Silicon dioxide; Trap

Indexed keywords

CALCULATIONS; ELECTRIC BREAKDOWN; ELECTRIC DISTORTION; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; ELECTRONS; MATHEMATICAL MODELS; SILICA;

AMORPHOUS SILICON DIOXIDE FILM; CLUSTER MODEL; GENERATION MECHANISM; INTRINSIC CHARGE TRAP; LOCAL DISTORTION; MOLECULAR ORBITAL METHOD; STABLE ATOMIC CONFIGURATION; TRAP GENERATION;

DIELECTRIC FILMS;

EID: 0030080458 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1540 Document Type: Article

Times cited : (14)

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