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Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 21-26

Growth, characterization, and application of high Al-content AIGaN and high power III-nitride ultraviolet emitters

(12) Ren, Z a Jeon, S R a Gherasimova, M a Cui, G a Han, J a Peng, H b Song, Y K b Nurmikko, A V b Zhou, L c Goetz, W c Krames, M c Cho, H K d

a Yale University (United States)

b Brown University (United States)

c Philips Lumileds Lighting Company (United States)

d Dong A University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CURRENT DENSITY; ELECTRIC CONDUCTIVITY; MAGNESIUM PRINTING PLATES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING; SILICON; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

ELECTRICAL TRANSPORT; FREE HOLE CONCENTRATION; SAPPHIRE SUBSTRATES; ULTRAVIOLET EMITTERS;

LIGHT EMITTING DIODES;

EID: 23844513084 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (7)

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