Site multiplicity of rare earth ions in III-nitrides

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 527-536

  O'Donnell, K P ^a   Katchkanov, V ^a,b   Wang, K ^a   Martin, R W ^a   Edwards, P R ^a   Hourahine, B ^a   Nogales, E ^a   Mosselmans, J F W ^b   De Vries, B ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTROLUMINESCENCE; ELECTRON EMISSION; ERBIUM; GALLIUM NITRIDE; IONS; LIGHT ABSORPTION; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; RARE EARTH ELEMENTS; SEMICONDUCTOR MATERIALS; X RAY ANALYSIS;

DEFECT CONFIGURATIONS; DEFECT STRUCTURE; EMISSION CHANNELING (EC); X-RAY ABSORPTION FINE STRUCTURE (XAFS);

NITRIDES;

EID: 23844512467     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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