New spectroscopic data of erbium ions in GaN thin films

Materials Science and Engineering: B

Volumn 105, Issue 1-3, 2003, Pages 126-131

  Pelle F ^a   Auzel, F ^a   Zavada, J M ^b   Lee, D S ^c   Steckl, A J ^c  

^a UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

^b U S ARMY RESEARCH OFFICE   (United States)

^c 705 Engineering Research Center   (United States)

Author keywords

GaN; Luminescence; Rare earth; Spectroscopy

Indexed keywords

ERBIUM; FLUORESCENCE; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NEODYMIUM LASERS; PHOTOLUMINESCENCE; QUENCHING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; THIN FILMS;

CRYSTAL FIELD STRENGTH; LASER EXCITATION;

GALLIUM NITRIDE;

EID: 0344153825     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.08.030     Document Type: Conference Paper

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