Performance stability of high-power III-nitride metal-oxide semiconductor-heterostructure field-effect transistors

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2651-2654

  Saygi, S ^a   Fatima, H ^a   He, X ^a   Rai, S ^a   Koudymov, A ^a   Adivarahan, Y ^a   Yang, J ^a   Simin, G ^a   Asif Khan, M ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; HETEROJUNCTIONS; LEAKAGE CURRENTS; MICROWAVES; MOS DEVICES;

ELEVATED TEMPERATURES; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFET); HIGH-POWER MICROWAVE APPLICATIONS; RF POWERS;

FIELD EFFECT TRANSISTORS;

EID: 23844459148     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461520     Document Type: Conference Paper

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