A photoconductive model for superior GaAs THz photomixers

Applied Physics Letters

Volumn 75, Issue 6, 1999, Pages 769-771

  Brown, E R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; GAIN CONTROL; INTERFACES (MATERIALS); MICROELECTRODES; OPTICAL PUMPING; OPTICAL RESOLVING POWER; PHOTOCONDUCTIVITY; QUANTUM EFFICIENCY; RESONANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH;

INTERDIGITATED ELECTRODES; PHOTOMIXER STRUCTURES; RESONANT-CAVITY ABSORPTION;

INTEGRATED OPTOELECTRONICS;

EID: 0032606681     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124507     Document Type: Article

References (12)

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7. The space charge and nonohmic effects, found previously to be important at high fields and low temperatures, are ignored here.
8. As measured by time-resolved photoreflectance techniques.
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