Molecular beam epitaxy of quaternary semiconductor alloy GaNAsBi

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 501-504

  Yoshimoto, M ^a   Huang, W ^a   Takehara, Y ^a   Chayahara, A ^b   Horino, Y ^b   Saraie, J ^a   Oe, K ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM ALLOYS; GROWTH (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; WAVELENGTH DIVISION MULTIPLEXING;

PLASMA ACTIVATED ALLOYS; QUATERNARY SYSTEMS; SEMICONDUCTOR ALLOYS; TEMPERATURE-INSENSITIVE BANDGAPS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 23744509127     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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