Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 223-227

  Shieh, M S ^a   Lin, Y J ^a   Yu, C M ^a   Lei, T F ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Asymmetric implantation; Diffusion of impurities; Reliability; Thin film transistors

Indexed keywords

ANNEALING; ELECTRIC FIELD EFFECTS; ION IMPLANTATION; LEAKAGE CURRENTS; POLYSILICON; RELIABILITY; SEMICONDUCTOR JUNCTIONS;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAY (AMLCD); ASYMMETRIC IMPLANTATION; DIFFUSION OF IMPURITIES; GATE ELECTRODE;

THIN FILM TRANSISTORS;

EID: 23444455150     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.104     Document Type: Conference Paper

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