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Volumn 237, Issue 1-2, 2005, Pages 278-283

Ion implantation of boron into silicon by use of the boron cathodic-arc plasma generator: First results

Author keywords

Amorphization; Boron; Cathodic arc; Doping; Shallow junction; Silicon

Indexed keywords

AMORPHIZATION; CATHODES; ETCHING; ION IMPLANTATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON;

EID: 23444437078     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.05.004     Document Type: Conference Paper
Times cited : (8)

References (14)
  • 14
    • 33644490194 scopus 로고    scopus 로고
    • United States Patent Application No. US2004/0119025 A1, June 24
    • J.M. Williams, United States Patent Application No. US2004/0119025 A1, June 24, 2004.
    • (2004)
    • Williams, J.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.