Applications of plasma immersion ion implantation in microelectronics - a brief review

Surface and Coatings Technology

Volumn 136, Issue 1-3, 2001, Pages 151-156

  Chu, Paul K ^a   Chan, Chung ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b NORTHEASTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONIC PROCESSING; PLASMA APPLICATIONS; SURFACE TREATMENT;

PLASMA IMMERSION ION IMPLANTATION (PIII);

ION IMPLANTATION;

EID: 0035254248     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(00)01046-X     Document Type: Article

References (49)

1. J.R. Conrad, J.L. Radtke, R.A. Dodd, F.J. Worzala, N.C. Tran, J. Appl. Phys. 62 (1987) 4591.
2. J. Tendys, I.J. Donnelly, M.J. Kenny, J.T.A. Pollock, Appl. Phys. Lett. 53 (1988) 2143.
3. P.K. Chu, S. Qin, C. Chan, N.W. Cheung, L.A. Larson, Mater. Sci. Eng. Rep. R17 (6-7) (1996) 207.
4. P.K. Chu, N.W. Cheung, C. Chan, Semiconductor Int. 6 (1996) 165.
5. B. Mizuno, I. Nakayama, Appl. Phys. Lett. 53 (1988) 2059.
6. N.W. Cheung, Nucl. Instrum. Methods Phys. Res. B 55 (1991) 811.
7. X.Y. Qian, N.W. Cheung, M.A. Lieberman et al., Nucl. Instrum. Methods Phys. Res. B 55 (1991) 821.
8. B.C. Jones, N.W. Cheung, IEEE Electr. Dev. Lett. 14 (9) (1993) 444.
9. A. Hori, B. Mizuno, Tech. Dig. IEDM 485 (1994).
10. D.L. Chapek, J.R. Conrad, R.J. Matyi, S.B. Felch, J. Vac. Sci. Technol. B 12 (2) (1994) 951.
11. S. Qin, C. Chan, J. Vac. Sci. Technol. B 12 (2) (1994) 962.
12. T. Sheng, S.B. Felch, C.B. Cooper, J. Vac. Sci. Technol. B 12 (2) (1994) 969.
13. S.B. Felch, R. Brennan, S.F. Corcoran, G. Webster, Nucl. Instrum. Methods B 74 (1993) 156.
14. M. Takase, B. Mizuno, Tech. Dig. IEDM 641 (1999).
15. M.J. Goeckner, S.B. Felch, J. Weeman, S. Mehta, J.S. Reedholm, J. Vac. Sci. Technol. A 17 (1999) 1501.
16. M.J. Goeckner, S.B. Felch, Z. Fang et al., J. Vac. Sci. Technol. B 17 (5) (1999) 2290.
17. P.K. Chu, S.B. Felch, P. Kellerman, F. Sinclair, L.A. Larson, B. Mizuno, Solid State Technol. 42 (9) (1999) 55.
18. P.K. Chu, S.B. Felch, P. Kellerman, F. Sinclair, L.A. Larson, B. Mizuno, Solid State Technol. 42 (10) (1999) 77.
19. J. Min, P.K. Chu, Y.C. Cheng et al., Mater. Chem. Phys. 40 (3) (1995) 219.
20. J.B. Liu, S.S.K. Iyer, C.M. Hu et al., Appl. Phys. Lett. 67 (16) (1995) 2361.
21. J. Min, P.K. Chu, Y.C. Cheng, J. Liu, S.S. Iyer, N.W. Cheung, Surf. Coat. Technol. 85 (1-2) (1996) 60.
22. P.K. Chu, X. Lu, S.S.K. Iyer, N.W. Cheung, Solid State Technol. 40 (5) (1997) S9.
23. X. Lu, S.S.K. Iyer, J.B. Liu et al., Appl. Phys. Lett. 70 (13) (1997) 1748.
24. S.S.K. Iyer, X. Lu, J.B. Liu et al., IEEE Trans. Plasma Sci. 25 (5) (1997) 1128.
25. X. Lu, N.W. Cheung, M.D. Strathman, P.K. Chu, B. Doyle, Appl. Phys. Lett. 71 (13) (1997) 1804.
26. X. Lu, S.S.K. Iyer, C.M. Hu et al., Appl. Phys. Lett. 71 (19) (1997) 2767.
27. P.K. Chu, S. Qin, C. Chan, N.W. Cheung, P.K. Ko, IEEE Trans. Plasma Sci. 26 (1) (1998) 79.
28. X. Lu, S.S.K. Iyer, J. Lee et al., J. Electron. Mater. 27 (9) (1998) 1059.
29. P.K. Chu, N.W. Cheung, Mater. Chem. Phys. 57 (1) (1998) 1.
30. C. Yu, N.W. Cheung, IEEE Electr. Dev. Lett. 15 (1994) 196.
31. J.D. Bernstein, S. Qin, C. Chan, T.J. King, IEEE Electr. Dev. Lett. 16 (10) (1995) 421.
32. Z. Fan, G. Zhao, P.K. Chu, Z. Jin, H.S. Kwok, M. Wong, Appl. Phys. Lett. 73 (3) (1998) 360.
33. S. Qin, Y.Z. Zhou, C. Chan, P.K. Chu, IEEE Electr. Dev. Lett. 19 (11) (1998) 420.
34. A.H.P. Ho, D.T.K. Kwok, X.C. Zeng, C. Chan, P.K. Chu, Proceedings of the 5th Plasma-Based Ion Implantation Workshop, Kyoto, Japan, 13-16 December 1999, (1999) (paper P-58).
35. M. Bruel, B. Aspar, B. Charlet et al., Smart-cut®: a promising new SOI material technology, IEEE International SOI Conference Proceedings, Tucson, Arizona, 1995, (1995) 178-179.
36. Q.Y. Tong, T.H. Lee, K. Gutiahr, S. Hopfe, U. Gosele, Appl. Phys. Lett. 70 (1997) 1390.
37. L.B. Freund, Appl. Phys. Lett. 70 (1997) 3519.
38. L. Feng, M. Bryan, B. En et al., Proceedings of the 5th Plasma-Based Ion Implantation Workshop, Kyoto, Japan, 13-16 December 1999, (1999) (paper O-02).
39. Z. Fan, P.K. Chu, N.W. Cheung, C. Chan, IEEE Trans. Plasma Sci. 27 (2) (1999) 633.
40. D. Wang, T. Ma, X. Deng, J. Vac. Sci. Technol. B 12 (1994) 905.
41. C.K. Birdsall, A.B. Langdon, Plasma Physics via Computer Simulation, McGraw-Hill, New York, 1985.
42. Z. Fan, P.K. Chu, C. Chan, N.W. Cheung, Appl. Phys. Lett. 73 (2) (1998) 202.
43. T.K. Kwok, P.K. Chu, C. Chan, IEEE Trans. Plasma Sci. 26 (6) (1998) 1669.
44. D.T.K. Kwok, P.K. Chu, B.P. Wood, C. Chan, J. Appl. Phys. 86 (4) (1999) 1817.
45. Z. Fan, Q.C. Chen, P.K. Chu, C. Chan, IEEE Trans. Plasma Sci. 26 (6) (1998) 1661.
46. Z. Fan, X. Zeng, P.K. Chu, C. Chan, M. Watanabe, Nucl. Instrum. Methods Phys. Res. B 155 (1-2) (1999) 75.
47. 2 films for interlayer dielectrics in quarter-micron ULSI multilevel interconnections, low-dielectric constant material-synthesis and applications in microelectronics, Mater. Res. Soc. Symp. Proc. 381 (1995) 239-248 (Editors: T.-M. Lu, S.P. Murarka, T.-S. Kuan, C.H. Ting).
48. S. Qin, J. Bernstein, Z. Zhao et al., J. Vac. Sci. Technol. B 13 (5) (1995) 1994.
49. P. Singer, Semiconductor Int. 7 (1997) 126.