Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 3968-3976

  Takamura, Y ^a   Marshall, A F ^b   Mehta, A ^c   Arthur, J ^c   Griffin, P B ^a   Plummer, J D ^a   Patel, J R ^a,d  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICALLY ACTIVE CONCENTRATIONS; GRAZING INCIDENCE; LASER ANNEALING; METASTABLE DOPANTS;

AGGLOMERATION; ANNEALING; DIFFUSION; DOPING (ADDITIVES); LASER BEAMS; MATRIX ALGEBRA; PRECIPITATION (CHEMICAL); SENSITIVITY ANALYSIS; SILICON WAFERS; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY SCATTERING;

ANTIMONY;

EID: 2342644019     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1666975     Document Type: Article

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