메뉴 건너뛰기




Volumn 112, Issue 2-3, 2004, Pages 286-290

Effects of pressure sensor dimensions on process window of membrane thickness

Author keywords

Membrane; MEMS; Microsensors; Pressure sensors; Process window

Indexed keywords

COMPUTER SIMULATION; COSTS; DOPING (ADDITIVES); FINITE DIFFERENCE METHOD; FINITE ELEMENT METHOD; MEMBRANES; MICROELECTROMECHANICAL DEVICES; OPTICAL RESOLVING POWER; RESISTORS; SENSITIVITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SOLUTIONS; THERMAL EFFECTS;

EID: 2342639628     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.02.001     Document Type: Article
Times cited : (26)

References (17)
  • 2
    • 0019898237 scopus 로고
    • SENSIM: A simulation program for solid-state pressure sensor
    • Lee K.I., Wise K.D. SENSIM: a simulation program for solid-state pressure sensor. IEEE Electron Devices. ED-29:1982;34-41.
    • (1982) IEEE Electron Devices , vol.ED-29 , pp. 34-41
    • Lee, K.I.1    Wise, K.D.2
  • 3
    • 0000798357 scopus 로고
    • Mechanical analysis of polycrystalline and single-crystalline silicon microstructures
    • Kovács A., Stoffel A. Mechanical analysis of polycrystalline and single-crystalline silicon microstructures. Sens. Actuators A. 41/42:1994;672-679.
    • (1994) Sens. Actuators A , vol.41-42 , pp. 672-679
    • Kovács, A.1    Stoffel, A.2
  • 6
    • 1542285556 scopus 로고    scopus 로고
    • Analysis solutions of sensitivity for pressure microsensors
    • Gong S.-C., Lee C. Analysis solutions of sensitivity for pressure microsensors. IEEE Sens. J. 1:2001;340-344.
    • (2001) IEEE Sens. J. , vol.1 , pp. 340-344
    • Gong, S.-C.1    Lee, C.2
  • 7
    • 1542331398 scopus 로고    scopus 로고
    • Direct calculation of sensor performance in a FEA model
    • Krondorfer R.H., Lommasson T.C. Direct calculation of sensor performance in a FEA model. Proc. IEEE Sens. 2:2002;1270-1274.
    • (2002) Proc. IEEE Sens. , vol.2 , pp. 1270-1274
    • Krondorfer, R.H.1    Lommasson, T.C.2
  • 8
    • 0032308176 scopus 로고    scopus 로고
    • Application of aluminum films as temperature sensors for the compensation of output thermal shift of silicon piezoresistive pressure sensors
    • Stankevič V., Šimkevičius Č. Application of aluminum films as temperature sensors for the compensation of output thermal shift of silicon piezoresistive pressure sensors. Sens. Actuators A. 71:1998;161-166.
    • (1998) Sens. Actuators A , vol.71 , pp. 161-166
    • Stankevič, V.1    Šimkevičius, Č.2
  • 9
    • 1542301538 scopus 로고    scopus 로고
    • Combined effect of the membrane flatness defect and real dimensions gauges on the sensitivity of a silicon piezoresistive pressure sensor
    • Dibi Z., Boukabache A., Pons P. Combined effect of the membrane flatness defect and real dimensions gauges on the sensitivity of a silicon piezoresistive pressure sensor. Proc. IEEE Sens. 2:2002;990-993.
    • (2002) Proc. IEEE Sens. , vol.2 , pp. 990-993
    • Dibi, Z.1    Boukabache, A.2    Pons, P.3
  • 11
    • 0018752437 scopus 로고
    • Integrated signal conditioning for silicon pressure sensors
    • Borky J.M., Wise K.D. Integrated signal conditioning for silicon pressure sensors. IEEE Trans. Electron Devices. ED-26:1979;1906-1910.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 1906-1910
    • Borky, J.M.1    Wise, K.D.2
  • 16
    • 33846693940 scopus 로고
    • Piezoresistance effect in germanium and silicon
    • Smith C.S. Piezoresistance effect in germanium and silicon. Phys. Rev. 94:1954;42-49.
    • (1954) Phys. Rev. , vol.94 , pp. 42-49
    • Smith, C.S.1
  • 17
    • 0000023102 scopus 로고
    • Piezoresistive properties of silicon diffused layers
    • Tufte O.N., Stelzer E.L. Piezoresistive properties of silicon diffused layers. J. Appl. Phys. 34:1963;313-318.
    • (1963) J. Appl. Phys. , vol.34 , pp. 313-318
    • Tufte, O.N.1    Stelzer, E.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.