메뉴 건너뛰기




Volumn 1, Issue 4, 2001, Pages 340-344

Analytical solutions of sensitivity for pressure microsensors

Author keywords

Microsensors; Piezoresistive; Pressure

Indexed keywords


EID: 1542285556     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/7361.983474     Document Type: Article
Times cited : (49)

References (9)
  • 2
    • 0019898237 scopus 로고
    • SENSIM: A simulation program for solidstate pressure sensors
    • K. I. Lee and K. D. Wise, "SENSIM: A simulation program for solidstate pressure sensors," IEEE Electron Devices, vol. ED-29, pp. 34-41, 1982.
    • (1982) IEEE Electron Devices , vol.ED-29 , pp. 34-41
    • Lee, K.I.1    Wise, K.D.2
  • 3
    • 0000798357 scopus 로고
    • Mechanical analysis of polycrystalline and single-crystalline silicon microstructures
    • A. Kovâcs and A. Stoffel, "Mechanical analysis of polycrystalline and single-crystalline silicon microstructures," Sens. Actuators A, vol. 41-12, pp. 672-679, 1994.
    • (1994) Sens. Actuators A , vol.41 , Issue.12 , pp. 672-679
    • Kovâcs, A.1    Stoffel, A.2
  • 7
    • 0000392980 scopus 로고
    • Silicon diffused-element piezoresistive diaphragm
    • O. N. Tufte, P. W. Chapman, and D. Long, "Silicon diffused-element piezoresistive diaphragm,"/ Appl. Phys., vol. 33, pp. 3322-3327, 1962.
    • (1962) / Appl. Phys. , vol.33 , pp. 3322-3327
    • Tufte, O.N.1    Chapman, P.W.2    Long, D.3
  • 8
    • 33846693940 scopus 로고
    • Piezoresistance effect in germanium and silicon
    • C. S. Smith, "Piezoresistance effect in germanium and silicon," Phys. Rev., vol. 94, pp. 429, 1954.
    • (1954) Phys. Rev. , vol.94 , pp. 42-49
    • Smith, C.S.1
  • 9
    • 0000023102 scopus 로고
    • Piezoresistive properties of silicon diffused layers
    • O. N. Tufte and E. L. Stelzer, "Piezoresistive properties of silicon diffused layers," / Appl. Phys., vol. 34, pp. 313-318, 1963.
    • (1963) / Appl. Phys. , vol.34 , pp. 313-318
    • Tufte, O.N.1    Stelzer, E.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.