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Volumn 229, Issue 1-4, 2004, Pages 333-337

The morphology of an InP wetting layer on GaAs

Author keywords

Exchange reaction; GaAs; InP; Morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; MORPHOLOGY; PHOSPHORUS COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; WETTING;

EID: 2342632553     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.02.011     Document Type: Article
Times cited : (1)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.