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Volumn 229, Issue 1-4, 2004, Pages 333-337
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The morphology of an InP wetting layer on GaAs
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Author keywords
Exchange reaction; GaAs; InP; Morphology
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
DESORPTION;
METALLORGANIC VAPOR PHASE EPITAXY;
MONOLAYERS;
MORPHOLOGY;
PHOSPHORUS COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
WETTING;
BAND STRUCTURES;
EXCHANGE REACTIONS;
WETTING LAYERS;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 2342632553
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2004.02.011 Document Type: Article |
Times cited : (1)
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References (20)
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