Nanometer-scale investigation of metal-SiC interfaces using ballistic electron emission microscopy

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 345-352

  Im, H J ^a   Kaczer, B ^a   Pelz, J P ^a   Limpijumnong, S ^b   Lambrecht, W R L ^b   Choyke, W J ^c  

^a OHIO STATE UNIVERSITY   (United States)

^b CASE WESTERN RESERVE UNIVERSITY   (United States)

^c UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

Ballistic electron emission microscopy (BEEM); Metal semiconductor interface; Scanning tunneling microscopy (STM); Schottky barrier; Silicon carbide (SiC)

Indexed keywords

EID: 0008649722     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0413-8     Document Type: Article

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