Study of the exciton transitions in InGaAsP/InGaAsP MQWs to determine the band offset of the structure

Physica Status Solidi C: Conferences

Volumn 1, Issue 3, 2004, Pages 535-538

  Tari D ^a   De Giorgi, M ^b   Cingolani, R ^b  

^a Nanoscience Dept   (Italy)

^b NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPOSITION; EXCITONS; HETEROJUNCTIONS; LASER BEAMS; LIGHT ABSORPTION; LIGHT MODULATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COMMUNICATION; OPTICAL FIBERS; PROBLEM SOLVING;

BAND OFFSET; EXCITON TRANSITIONS; UNIPOLAR DETRAPPING; UNSTRAINED STRUCTURES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2342624622     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200304033     Document Type: Conference Paper

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