Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

Optical and Quantum Electronics

Volumn 33, Issue 2, 2001, Pages 209-223

  Ma, C S ^a   Wang, L J ^b   Liu, S Y ^a  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRONIC DENSITY OF STATES; GAIN MEASUREMENT; LIGHT EMISSION; NUMERICAL ANALYSIS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN;

BAND OFFSETS; CAVITY LENGTH; INDIUM GALLIUM ARSENIDE PHOSPHIDE; OPTICAL GAIN; STRAIN COMPENSATION; VALENCE BAND STRUCTURES; WAVELENGTH EMISSION;

QUANTUM WELL LASERS;

EID: 0035250580     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1007126406022     Document Type: Article

References (19)

1. Chua, C.L., C.H. Lin, Z.H. Zhu, Y.H. Lo, M. Hong, J.P. Mannaerts and R. Bhat. IEEE Photon. Tec. Lett. 6 1400, 1994.
2. Derry, P.L., R.J. Fu, C.S. Hong, E.Y. Chan and L. Figueroa. IEEE J. Quantum. Electron. 28 2698, 1992.
3. Hillmer, H., R. Lösch, F. Steinhagen, W. Schlapp, A. Pöcker and H. Burkhard. Electron. Lett. 31 1346, 1995.
4. Hong, S.C., M. Jaffe and J. Singh. IEEE J. Quantum. Electron. QE-23 2181, 1987.
5. Ishikawa T. and J.E. Bowers. IEEE J. Quantum. Electron. 30 562, 1994.
6. Kasukawa, A., N. Yokouchi, N. Yamanaka and N. Iwai. Electron. Lett. 31 1749, 1995a.
7. Kasukawa, A., N. Yokouchi, N. Yamanaka, N. Iwai and T. Matsuda. Jpn. J. Appl. Phys. 34, Pt. 2 L965, 1995b.
8. Lin, C.H., C.L. Chua, Z.H. Zhu, F.E. Ejeckam, T.C. Wu and Y.H. Lo. Appl. Phys. Lett. 64 3395, 1994.
9. Lin C.H. and Y.H. Lo. IEEE Photon. Tec. Lett. 5 288, 1993.
10. Ma, C.S., C.H. Han and S.Y. Liu. Opt. Quantum Electron. 29 697, 1997.
11. Miller, B.I., U. Koren, M.G. Young and M.D. Chien. Appl. Phys. Lett. 58 1952, 1991.
12. Nido, M., K. Naniwae, J. Shimizu, S. Murata and A. Suzuki. IEEE J. Quantum. Elecctron. 29 885, 1993.
13. Ougazzaden, A., F. Devaux, E.V.K. Rao, L. Silvestre and G. Patriarche. Appl. Phys. Lett. 70 96, 1997.
14. Ougazzaden, A., D. Sigogne, A. Mircea, E.V.K. Rao, A. Ramdane and L. Silvestre. Electron. Lett. 31 1242, 1995.
15. Park, S.H., W.G. Jeong and B.D. Choe. Appl. Phys. Lett. 66 201, 1995.
16. Silfvenious, C., B. Stalnacke and G. Landgren. J. Crystal Growth 170 122, 1997.
17. Streubel, K., J. Wallin, G. Landgren, U. Öhlander, S. Lourdudoss and O. Kjebon. J. Crystal Growth 143 7, 1976.
18. Tu, C.W., X.B. Mei, C.H. Yan and W.G. Bi. Materials Sci. Eng. B 35 166, 1995.
19. Zhang G. and A. Ovtchinnikov, Appl. Phys. Lett. 62 1644, 1993.