Influence of holmium doping on the optical properties of quaternary InGaAsP epitaxial layers

Solid State Communications

Volumn 120, Issue 12, 2001, Pages 501-504

  Lee, Y C ^a   Shu, H T ^a   Shen, J L ^a   Liao, K F ^a   Uen, W Y ^a  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

A. Semiconductros; D. Optical properties

Indexed keywords

DOPING (ADDITIVES); IMPURITIES; LIGHT ABSORPTION; LIQUID PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE;

EPITAXIAL LAYERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035976509     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(01)00435-5     Document Type: Article

References (17)