Temperature dependence of quantized states in an In0.86Ga0.14As0.3p0.7/Inp quantum well heterostructure

Journal of Applied Physics

Volumn 81, Issue 1, 1997, Pages 400-405

  Li, C F ^a   Lin, D Y ^a   Huang, Y S ^a   Chen, Y F ^b   Tiong, K K ^c  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; ENERGY GAP; EXCITONS; HETEROJUNCTIONS; MEASUREMENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

CONTACTLESS ELECTROREFLECTANCE; CONTACTLESS ELECTROREFLECTANCE MEASUREMENTS; PIEZOREFLECTANCE; PIEZOREFLECTANCE MEASUREMENTS; QUANTIZED STATES; TEMPERATURE DEPENDENCE;

ELECTRON ENERGY LEVELS;

EID: 0030846956     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364071     Document Type: Article

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