Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 338-342

  Chen, J X ^a   Li, A Z ^a   Chen, Y Q ^a   Guo, F M ^a   Lin, C ^a   Zhang, Y G ^a   Qi, M ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

A3. Molecular beam epitaxy; B1. Phosphides; B3. Laser diodes

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT VOLTAGE CHARACTERISTICS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

LASER SPECTROSCOPY; PHOSPHIDES;

QUANTUM WELL LASERS;

EID: 0035398121     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00717-5     Document Type: Conference Paper

References (5)