Effect of programming biases on the reliability of CHE and CHISEL flash EEPROMs

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 518-522

  Mohapatra, Nihar R ^a   Mahapatra, S ^a   Rao, V Ramgopal ^a   Shukuri, S ^b   Bude, J ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b HITACHI LTD   (Japan)

^c AGERE SYSTEMS   (United States)

Author keywords

CHE; CHISEL; Cycling endurance and Monte Carlo simulation; Flash EEPROM; Hot carriers

Indexed keywords

FLASH MEMORY; HOT CARRIERS; INTELLIGENT SYSTEMS; RELIABILITY; TOOLS;

CHE; CHISEL; CONTROL GATES; CYCLING ENDURANCE; FLASH EEPROMS; NOR FLASH EEPROMS; PHYSICAL MECHANISM; PROGRAMMING TIME;

MONTE CARLO METHODS;

EID: 2342571991     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197802     Document Type: Conference Paper

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