High conversion efficiency mass-limited Sn-based laser plasma source for extreme ultraviolet lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 785-790

  Richardson, M ^a   Koay, C S ^a   Takenoshita, K ^a   Keyser, C ^a   Al Rabban, M ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b QATAR UNIVERSITY   (Qatar)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CAMERAS; CHARGE COUPLED DEVICES; DEBRIS; FREQUENCIES; IMAGE ANALYSIS; LASER APPLICATIONS; LITHIUM; NOZZLES; OXYGEN; PIEZOELECTRIC MATERIALS; PLASMA SOURCES; SPECTROMETERS; TIN; X RAY PHOTOELECTRON SPECTROSCOPY;

BROADBAND RADIATION; CONVERSION EFFICIENCIES; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); TRANSMISSION GRATING SPECTROMETERS (TGS);

PHOTOLITHOGRAPHY;

EID: 2342535109     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1667511     Document Type: Article

References (26)

1. V. Y. Banine, J. P. H. Benschop, and H. G. C. Werij, Microelectron. Eng. 53, 681 (2000).
2. C. Gwyn, D. Attwood, and D. Sweeney, J. Vac. Sci. Technol. B 16, 3142 (1998).
3. D. A. Tichenor et al., Opt. Lett. 16, 557 (1991).
4. B. A. M. Hansson, L. Rymell, M. Berglund, and H. M. Hertz, Microelectron. Eng. 53, 667 (2000).
5. D. Moyer, presented at Sematech Workshop on EUVL Source Development, San Jose, 2 March 2001 (unpublished).
6. F. Jin, K. Gabel, M. Richardson, M. Kado, A. F. Vassiliev, and D. Salzmann, Proc. SPIE 2015, 151 (1993).
7. M. Richardson, D. Torres, C. DePriest, F. Jin, and G. Shimkaveg, Opt. Commun. 145, 109 (1998).
8. G. Schriever, M. Richardson, and E. Turcu (unpublished).
9. E. Turcu, H. Rieger, M. Powers, M. Richardson, and C. Keyser, presented at Sematech Workshop on EUVL Source Development, Matsue, Japan, 2001 (unpublished).
10. First mentioned in a report by JMAR Research Corp. at the EUVL Source Workshop, Santa Clara, CA, 2 March 2001.
11. M. Richardson, patent pending.
12. JMAR laser, diode-pumped, 5000 W, 100 kHz.
13. TRW laser, diode-pumped, NdiYAG, 4500 W, 5 kHz.
14. M. Richardson and F. Jin, Topical Meeting EUV Lithography, Sept. 1994, pp. 41-43.
15. F. Jin and M. Richardson, Topical Meeting EUV Lithography, Sept. 1994, pp. 88-91.
16. F. Jin, M. Richardson, G. Shimkaveg, and D. Torres, Proc. SPIE 2523, 81 (1995).
17. Concave diffraction grating (A = 5650 mm, size 26 mm×46 mm) model: 001-0266 from HITACHI.
18. W. Schwanda, K. Eidmann, and M. C. Richardson, J. X-Ray Sci. Technol. 4, 8 (1993).
19. R. Stuik, F. Scholze, J. Tummler, and F. Bijkerk, Nucl. Instrum. Methods Phys. Res. A 429, 305 (2002).
20. AXUV Series detectors from IRD, Inc. (US).
21. X-ray CCD camera model: MTE/CCD-1024-SB from Princeton Instrument.
22. X-ray CCD camera model: PI-SX:512 from Princeton Instrument.
23. G. O'Sullivan and R. Faulkner, Opt. Eng. 33, 3978 (1994).
24. P. A. Rodgers, A. M. Rogoyski, and S. J. Rose, MED101: A laser-plasma simulation code. User Guide (Appleton, Rutherford, NJ, 1989).
25. G. Shriever, M. Richardson, and E. Turcu, Proc. CLEO 2000, p. 393.
26. M. Richardson and G. Schriever, U.S. Patent No. 6,377,651 (2002).