Modeling and simulation of AlN bulk sublimation growth systems

Journal of Crystal Growth

Volumn 266, Issue 1-3, 2004, Pages 303-312

  Wu, Bei ^a   Ma, Ronghui ^a   Zhang, Hui ^a   Prasad, Vish ^b  

^a Stony Brook University   (United States)

^b FLORIDA INTERNATIONAL UNIVERSITY   (United States)

Author keywords

A1. Computer simulation; A1. Growth models; A2. Growth from vapor; A2. Single crystal growth; A3. Chemical vapor deposition processes; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; SINGLE CRYSTALS; STRESS CONCENTRATION; SUBLIMATION; THERMAL STRESS;

DEFECT DENSITY; GROWTH FROM VAPOR; GROWTH MODELS; SINGLE CRYSTAL GROWTH;

CRYSTAL GROWTH;

EID: 2342474584     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.059     Document Type: Conference Paper

References (17)

1. Rojo J.C., Schowalter L.J., Gaska R., Shur M., Khan M.A., Yang J., Doleske D.D. J. Crystal Growth. 240:2002;508.
2. Liu L., Edgar J.H. Mater. Sci. Eng. Res. 37:2002;61.
3. Bliss D.F., Tassev V.L., Weyburne D., Bailey J.S. J. Crystal Growth. 250:2003;1.
4. Segal A.S., Karpov S.Yu., Makarov Yu.N., Mokhov E.N., Roenkov A.D., Ramm M.G., Vodakov Yu.A. J. Crystal Growth. 211:2000;68.
5. Liu L., Edgar J.H. J. Crystal Growth. 220:2000;243.
6. Jordan A.S., Von Neida A.R., Caruso R. J. Appl. Phys. 52:1981;3331.
7. Wu B., Ma R.-H., Zhang H., Dudley M., Schlesser R., Sitar Z. J. Crystal Growth. 253:2003;326.
8. Schlesser R., Sitar Z. J. Crystal Growth. 234:2002;349.
9. Ma R.-H., Zhang H., Ha S., Skowronski M. J. Crystal Growth. 252:2003;523.
10. Ma R.-H., Zhang H., Prasad V., Dudley M. J. Crystal Growth Des. 2:2002;213.
11. Chen Q.-S., Zhang H., Prasad V., Balkas C.M., Yushin N.K. J. Heat Transfer - Trans. ASME. 123:2001;1098.
12. Modest M.F. Radiative Heat Transfer. 1993;McGraw-Hill, New York.
13. Kaviany M. Principles of Heat Transfer in Porous Media. 1995;Springer, New York.
14. R.L. Mahajan, Transport Phenomena in Chemical Vapor-Deposition Systems, Advanced in Heat Transfer, Vol. 28, Academic Press, New York, 1996, p. 339.
15. Chen X.L., Lan Y.C., Li J.Y., Cao Y.G., He M. J. Crystal Growth. 222:2001;586.
16. Liu L., Edgar J.H. J. Electrochem. Soc. 149:2002;G12.
17. Noveski V., Schlesser R., Mahajan S., Beaudoin S., Sitar Z. J. Crystal Growth. 264:2004;369.