Millimeter-wave and mixed-signal integrated circuits based on advanced metamorphic HEMT technology

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 609-614

  Schlechtweg, M ^a   Leuther, A ^a   Tessmann, A ^a   Schwolrer C ^a   Massler, H ^a   Reinert, W ^a   Lang, M ^a   Nowotny, U ^a   Kappeier, O ^a   Walther, M ^a   Loosch R ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCIES; GATES (TRANSISTOR); INTEGRATED CIRCUITS; MILLIMETER WAVES; OPTICAL COMMUNICATION; SIGNAL PROCESSING;

BRIDGE TECHNOLOGY; CIRCUIT LEVELS; GATE LENGTH DEPLETION; TRANSIT FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 23144438280     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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