108 GHz dynamic frequency divider in 100 nm metamorphic enhancement HEMT technology

Electronics Letters

Volumn 39, Issue 13, 2003, Pages 989-990

  Kappeler, O ^a   Leuther, A ^a   Benz, W ^a   Schlechtweg, M ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMMUNICATION SYSTEMS; DEMULTIPLEXING; DIGITAL DEVICES; ENERGY UTILIZATION; FIELD EFFECT TRANSISTORS; FREQUENCY DIVIDING CIRCUITS; MIM DEVICES; MOLECULAR BEAM EPITAXY; MULTIPLEXING;

SOURCE COUPLED FET LOGIC (SCFL);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038046539     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030633     Document Type: Article

References (6)

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2. NAKAJIMA, H., SANO, E., IDA, M., and YAMAHATA, S.: '80 GHz 4:1 frequency divider IC using non-self-aligned InP-InGaAs heterostructure bipolar transistors', Electron. Lett., 2000, 36, (1), pp. 34-35
3. MATHEW, T., KIM, H.-J., SCOTT, D., JAGANATHAN, S., KRISHNAN, S., WEI, Y., URTEAGA, M., LONG, S., and RODWELL, M.J.W.: '75 GHz ECL Static frequency divider using InAlAs-InGaAs HBTs', Electron. Lett., 2001, 37, (11), pp. 667-668
4. LANG, M., LEUTHER, A., BENZ, W., RAYNOR, B., and SCHLECHTWEG, M.: '58-82 GHz 4:1 dynamic frequency divider using 100 nm metamorphic enhancement HEMT technology', Electron. Lett., 2002, 38, (8), pp. 367-368
5. RYLYAKOV, A., KLAPPROTH, L., JAGANNATHAN, B., and FREEMAN, G.: 'A 100 GHz dynamic frequency divider in SiGe bipolar technology'. Electron. Lett., 2003, 39, (2), pp. 217-218
6. TSUNASHIMA, S., NAKAJIMA, H., SANO, E., IDA, M., KURISHIMA, K., WATANABE, N., ENOKI, T., and SUGAHARA, H.: '90-GHz operation of novel dynamic frequency divider using InP/InGaAs HBTs'. 14th Indium Phosphide and Related Materials Conf., Stockholm, Sweden, May 2002