Simulation of carbon containing complexes at silicon-silicon grain boundaries in cluster approximation

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 142-146

  Pushkarchuk, A L ^a   Saad, A M ^b   Fedotov, A K ^c   Kuten, S A ^a  

^a INSTITUTE FOR NUCLEAR PROBLEMS   (Belarus)

^b AL BALQA APPLIED UNIVERSITY   (Jordan)

^c BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

Carbon; Grain boundary; Polycrystalline silicon

Indexed keywords

APPROXIMATION THEORY; CARBON; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; GRAIN BOUNDARIES; POLYSILANES; SILICA;

ATOMIC RADIUS; ETCH PITS; GAS PHASE; INTRINSIC NATURE;

SILICON;

EID: 22944472364     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.055     Document Type: Conference Paper

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