Simulation of oxygen-containing complexes at silicon-silicon interface in cluster approximation

Journal of Alloys and Compounds

Volumn 382, Issue 1-2, 2004, Pages 278-282

  Pushkarchuk, A L ^a   Fedotov, A K ^b   Kuten, S A ^a  

^a INSTITUTE FOR NUCLEAR PROBLEMS   (Belarus)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

Band gap; Cluster approximation; Electronic states (localized); Grain boundaries; Local structure; Oxygen; Semiconductors; Silicon

Indexed keywords

APPROXIMATION THEORY; COORDINATION REACTIONS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; INTERFACES (MATERIALS); OXYGEN; POLYCRYSTALS; SILICON;

BAND GAP; CLUSTER APPROXIMATION; ELECTRONIC STATES (LOCALIZED); LOCAL STRUCTURE;

COMPLEXATION;

EID: 8344242146     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.01.068     Document Type: Conference Paper

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