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Volumn 67, Issue , 1999, Pages 3-14

Atomic structure and properties of extended defects in silicon

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; HIGH RESOLUTION ELECTRON MICROSCOPY;

EID: 0032640332     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.67-68.3     Document Type: Article
Times cited : (17)

References (52)
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    • Polycrystalline Semiconductors
    • edited by H. J. Moller, H. P. Strunk, and J. H. Werner
    • A. Bourret and J. L. Rouviere, in Polycrystalline Semiconductors, edited by H. J. Moller, H. P. Strunk, and J. H. Werner, Springer Proc. Phys. 35, 8 (1989).
    • (1989) Springer Proc. Phys. , vol.35 , pp. 8
    • Bourret, A.1    Rouviere, J.L.2
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    • Structure and Properties of Dislocations in Semiconductors 1989
    • edited by S. G. Roberts et al., Institute of Physics, Bristol
    • J. H. Werner, in Structure and Properties of Dislocations in Semiconductors 1989, edited by S. G. Roberts et al., Inst. Phys. Conf. Series 104 (Institute of Physics, Bristol, 1989) p 63.
    • (1989) Inst. Phys. Conf. Series , vol.104 , pp. 63
    • Werner, J.H.1
  • 32
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    • Kohyama, M.1    Yamamoto, R.2
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    • (1994) Phys. Rev. B , vol.50 , pp. 8502
    • Kohyama, M.1    Yamamoto, R.2
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    • R. C. Newman, A. S. Oates, and F. M. Livingston, J. Phys. C 16, 1667 (1983); M. Claybourn and R. C. Newman, Appl. Phys. Lett. 51, 2197 (1987).
    • (1987) Appl. Phys. Lett. , vol.51 , pp. 2197
    • Claybourn, M.1    Newman, R.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.