SCOPUS 정보 검색 플랫폼

Solar Energy Materials and Solar Cells

Volumn 72, Issue 1-4, 2002, Pages 165-171

Comparative studies of EFG poly-Si grown by different procedures

(5) Pivac, B a Borjanovi, V b Kovacevi, I a Evtody, B N c Katz, E A d

a RUDER BO KOVI INSTITUTE (Croatia)

b UNIVERSITY OF ZAGREB (Croatia)

c FOTEKS Ltd (Russian Federation)

d BEN GURION UNIVERSITY OF THE NEGEV (Israel)

Author keywords

Carbon; Deep levels; Defects; Edge defined film fed growth; Oxygen; Polycrystalline silicon

Indexed keywords

ANNEALING; CRUCIBLES; CRYSTAL GROWTH; CRYSTAL IMPURITIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAPHITE; HIGH TEMPERATURE EFFECTS; OXYGEN; QUARTZ; SUPERSATURATION;

EDGE-DEFINED FILM-FED GROWTH (EFG);

POLYSILICON;

EID: 0036533099 PISSN: 09270248 EISSN: None Source Type: Journal
DOI: 10.1016/S0927-0248(01)00161-1 Document Type: Conference Paper

Times cited : (17)

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